* DIRECT REPLACEMENT FOR INTERSIL 3N171 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING ABSOLUTE MAXIMUM RATINGS (Note 1) @ 25°C (unless otherwise noted) rDS(on) ≤ 200Ω td(on) ≤ 3.0ns Maximum Temperatures Storage Temperature Operating Junction Temperature 3N171 Features: Maximum Power Dissip
3N171
Micross
289.41 KB
High speed switch.
3N171 N-CHANNEL MOSFET
The 3N171 is an enhancement mode N-Channel Mosfet
The 3N171 is an enhancement mode N-Channel Mosfet designed for use as a Gene.
📁 Related Datasheet
3N170 - N-Channel Enhancement Mode MOSFET Switch
(Calogic LLC)
N-Channel Enhancement Mode MOSFET Switch
CORPORATION
3N170 / 3N171
FEATURES HANDLING PRECAUTIONS MOS field-effect transistors have extremely high inp.
3N170 - N-CHANNEL MOSFET ENHANCEMENT MODE
(Linear Technology)
3N170 3N171
Linear Integrated Systems
FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING ABSOLUTE MA.
3N170 - (3N169 - 3N171) MOSFETs Switching
(Motorola Semiconductor)
..
..
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3N170 - High Speed Switch
(Micross)
3N170 N-CHANNEL MOSFET
The 3N170 is an enhancement mode N-Channel Mosfet
The 3N170 is an enhancement mode N-Channel Mosfet designed for use as a Gene.
3N171 - N-CHANNEL MOSFET ENHANCEMENT MODE
(Linear Technology)
3N170 3N171
Linear Integrated Systems
FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING ABSOLUTE MA.
3N171 - (3N169 - 3N171) MOSFETs Switching
(Motorola Semiconductor)
..
..
.
3N172 - Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
(Calogic LLC)
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
3N172 / 3N173
FEATURES
CORPORATION
• High Input Impedance • Diode.
3N173 - Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
(Calogic LLC)
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
3N172 / 3N173
FEATURES
CORPORATION
• High Input Impedance • Diode.
