Part number:
3N166
Manufacturer:
Micross
File Size:
377.20 KB
Description:
Amplifier.
* DIRECT REPLACEMENT FOR INTERSIL 3N166 ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) Maximum Temperatures The hermetically sealed TO-78 package is well suited Storage Temperature ‐65°C to +200°C for high reliability and harsh environment applications. Operating Junction Temperature
3N166
Micross
377.20 KB
Amplifier.
📁 Related Datasheet
3N161 - DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH
(Intersil Corporation)
.
3N163 - P-Channel Enhancement-Mode MOS Transistors
(Siliconix)
3N163 SERIES
P·Channel Enhancement·Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(fi) (mA) PACKAGE
3N163
-40
250
-5.
3N163 - High Speed Switch
(Micross)
3N163 P-CHANNEL MOSFET
The 3N163 is an enhancement mode P-Channel Mosfet
The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a Gene.
3N163 - P-CHANNEL ENHANCEMENT MODE MOSFET
(LINEAR SYSTEMS)
3N163, 3N164
P-CHANNEL ENHANCEMENT MODE
MOSFET
FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANC.
3N164 - P-Channel Enhancement-Mode MOS Transistors
(Siliconix)
3N163 SERIES
P·Channel Enhancement·Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(fi) (mA) PACKAGE
3N163
-40
250
-5.
3N164 - High Speed Switch
(Micross)
3N164 P-CHANNEL MOSFET
The 3N164 is an enhancement mode P-Channel Mosfet
The 3N164 is an enhancement mode P-Channel Mosfet designed for use as a Gene.
3N164 - P-CHANNEL ENHANCEMENT MODE MOSFET
(LINEAR SYSTEMS)
3N163, 3N164
P-CHANNEL ENHANCEMENT MODE
MOSFET
FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANC.
3N165 - Monolithic Dual P-Channel Enhancement Mode MOSFET
(Calogic LLC)
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
3N165 / 3N166
FEATURES
CORPORATION
• Very High Impedance • High Gate Bre.