3N190 - Amplifier

Features

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Micross

Datasheet Details

Part number	3N190
Manufacturer	Micross
File Size	307.29 KB
Description	Amplifier
Datasheet	3N190 Datasheet
Additional preview pages of the 3N190 datasheet.

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Full PDF Text Transcription

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3N190 P-CHANNEL MOSFET The 3N190 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 LOW GATE LEAKAGE CURRENT IGSS ≤ ± 10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF The hermetically sealed TO-78 package is well suited ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) for high reliability and harsh environment applications. Maximum Temperatures Storage Temperature ‐65°C to +150°C (See Packaging Information).

Published: Jun 9, 2011 |