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AS8ERLC128K32 - 128K x 32 Radiation Tolerant EEPROM

Datasheet Summary

Features

  • Access time of 250ns , 300ns.
  • Operation with single 3.3V (+ .3V) supply.
  • LOW Power Dissipation: Active(Worst case): 300mW (MAX), Max Speed Operation Standby(Worst case): 7.2mW(MAX), Battery Back-up Mode.
  • Automatic Byte Write: 15 ms (MAX).
  • Automatic Page Write (128 bytes): 15 ms (MAX).
  • Data protection circuit on power -on/off.
  • Low power CMOS MNOS cell Technology.
  • 104 Erase/Write cycles (in Page Mode).
  • Software data.

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Datasheet preview – AS8ERLC128K32

Datasheet Details

Part number AS8ERLC128K32
Manufacturer Micross
File Size 461.97 KB
Description 128K x 32 Radiation Tolerant EEPROM
Datasheet download datasheet AS8ERLC128K32 Datasheet
Additional preview pages of the AS8ERLC128K32 datasheet.

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Full PDF Text Transcription

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EEPROM AS8ERLC128K32 128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS • MIL-PRF-38534 FEATURES • Access time of 250ns , 300ns • Operation with single 3.3V (+ .3V) supply • LOW Power Dissipation: Active(Worst case): 300mW (MAX), Max Speed Operation Standby(Worst case): 7.
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