MT5C1001 Datasheet (Micross)

MT5C1001, 1M x 1 SRAM

The MT5C1001 employs low power, high-performance silicon-gate CMOS technology.

Static design eliminates the need for external clocks or timing strobes while CMOS circuitry reduces power consumption and provides for greater reliability.

For ﬂexibility in high-speed memory applications, Micross offers

MT5C1001 Features

* High Speed: 20, 25, 35, and 45

* Battery Backup: 2V data retention

* Low power standby

* Single +5V (+10%) Power Supply

* Easy memory expansion with CE and OE options.

* All inputs and outputs are TTL compatible

* Three-state output OPTIONS