MT5C128K8A1 Datasheet - Micron Technology

MT5C128K8A1 128K x 8 SRAM

The MT5C128K8A1 is organized as a 131,072 x 8 SRAM using a four-transistor memory cell with a high-speed, lowpower CMOS process. Micron SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. This device offers multiple center power and ground pins for improved performanc.

MT5C128K8A1 Features

* High speed: 12, 15, 20 and 25ns

* Multiple center power and ground pins for greater noise immunity

* Easy memory expansion with ?C/E and ?O/E options

* Automatic ?C/E power down

* All inputs and outputs are TTL-compatible

* High-performance, low-powe

MT5C128K8A1_MicronTechnology.pdf