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MT5C1008 128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

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Description

SRAM Austin Semiconductor, Inc.128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS *SMD 5962-89598 *MIL-STD-883 .
The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-.

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Datasheet Specifications

Part number
MT5C1008
Manufacturer
ASI
File Size
187.16 KB
Datasheet
MT5C1008_ASI.pdf
Description
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

Features

* High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns Battery Backup: 2V data retention Low power standby High-performance, low-power CMOS process Single +5V (+10%) Power Supply Easy memory expansion with CE1, CE2, and OE options.
* All

Applications

* this device offers dual chip enables (CE1, CE2) and output enable (OE). These control pins can place the outputs in High-Z for additional flexibility in system design. All devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible. Writing to these devices is

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