MT5C1008 Datasheet - ASI

MT5C1008 128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. For design flexibility in high-speed memory applications, this device offers dual chip enables (CE1, CE2) and output ena.

SRAM Austin Semiconductor, Inc. 128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS SMD 5962-89598 MIL-STD-883 NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 MT5C1008 PIN ASSIGNMENT (Top View) 32-Pin DIP (C, CW) 32-Pin CSOJ (SOJ) 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE DQ8 DQ7 DQ6 DQ5 DQ4 NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 32-Pin LCC (EC) 32-.

MT5C1008 Features

* High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns Battery Backup: 2V data retention Low power standby High-performance, low-power CMOS process Single +5V (+10%) Power Supply Easy memory expansion with CE1, CE2, and OE options.

* All

MT5C1008_ASI.pdf