MT5C1001 Datasheet - ASI

MT5C1001 SRAM

The MT5C1001 employs low power, high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or timing strobes while CMOS circuitry reduces power consumption and provides for greater reliability. For flexibility in high-speed memory applications, ASI offers ch.

Austin Semiconductor, Inc. 1M x 1 SRAM SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS SMD 5962-92316 MIL-STD-883 MT5C1001 Limited Availability PIN ASSIGNMENT (Top View) SRAM 28-Pin DIP (C) (400 MIL) A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc A9 A8 A7 A6 A5 A4 NC A3 A2 A1 A0 D CE 32-Pin LCC (EC) 32-Pin SOJ (DCJ) A10 A11 A12 NC A13 A14 A15 NC A16 A17 A18 A19 NC Q WE Vss 1 2 3 4 5.

MT5C1001 Features

* High Speed: 20, 25, 35, and 45 Battery Backup: 2V data retention Low power standby Single +5V (+10%) Power Supply Easy memory expansion with CE and OE options. All inputs and outputs are TTL compatible Three-state output 32-Pin F

MT5C1001_ASI.pdf