MT5C6401 Datasheet (Micron Technology)

MT5C6401, 64K x 1 SRAM

The MT5C6401 is organized as a 65,556 x 1 SRAM using a four-transistor memory cell with a high-speed, low-power CMOS process.

Micron SRAMs are fabricated using doublelayer metal, double-layer polysilicon technology.

For flexibility in high-speed memory applications, Micron offers chip enable (/C/E)

MT5C6401 Features

* High speed: 9, 10, 12, 15, 20 and 25ns

* High-performance, low-power, CMOS double-metal process

* Single +5V ±10% power supply

* Easy memory expansion with /C/E option

* All inputs and outputs are TTL-compatible 64K x 1 SRAM PIN ASSIGNMENT (Top View) 22-Pin