MT5C6408 Datasheet - ASI

MT5C6408 8K x 8 SRAM

No. 108 No. 204 No. 302 The MT5C6408, 8K x 8 SRAM, employs high-speed, low-power CMOS technology, eliminating the need for clocks or refreshing. These SRAM’s have equal access and cycle times. For flexibility in high-speed memory applications, Austin Semiconductor offers dual chip enables (CE1, CE2).

SRAM Austin Semiconductor, Inc. 8K x 8 SRAM SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS SMD 5962-38294 MIL-STD-883 MT5C6408 PIN ASSIGNMENT (Top View) A6 A7 A12 NC Vcc WE CE2 4 3 2 1 28 27 26 A5 A4 A3 A2 A1 A0 DQ0 5 6 7 8 9 10 11 25 24 23 22 21 20 19 A8 A9 A11 OE A10 CE1 DQ7 28-Pin DIP (C) (300 MIL) NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc WE CE2 A8 A9 A11 OE A10 CE1 DQ8 DQ7 DQ6 D.

MT5C6408 Features

* High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns

* Battery Backup: 2V data retention

* High-performance, low-power CMOS double-metal process

* Single +5V (+10%) Power Supply

* Easy memory expansion with CE1 and CE2

* All inputs and outputs are TTL co

MT5C6408 Datasheet (100.81 KB)