CT20VM-8 Datasheet - Mitsubishi Electric Semiconductor

CT20VM-8 IGBT

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VM-8 STROBE FLASHER USE CT20VM-8 OUTLINE DRAWING 1.5MAX. r 10.5MAX. Dimensions in mm 1.3 1 13.2 ± 0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 0.5 2.5 2.5 0.5 wr q q GATE w COLLECTOR e EMITTER r COLLECTOR e ¡VCES 400V ¡ICM 130A TO-220C APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol VCES VGES VGEM ICM Tj Tstg (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction.

CT20VM-8_MitsubishiElectricSemiconductor.pdf