CT20VS-8 Datasheet - Mitsubishi Electric Semiconductor

CT20VS-8 IGBT

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VS-8 STROBE FLASHER USE CT20VS-8 OUTLINE DRAWING 1.5MAX. Dimensions in mm r 10.5MAX. 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 0.5 0 +0.3 0 1 5 0.8 0.5 q w e wr 2.6 ± 0.4 q q GATE w COLLECTOR e EMITTER r COLLECTOR e ¡VCES 400V ¡ICM 130A TO-220S APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol VCES VGES VGEM ICM Tj Tstg (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitt.

CT20VS-8_MitsubishiElectricSemiconductor.pdf