MGF4921AM Datasheet, Hemt, Mitsubishi Electric Semiconductor

MGF4921AM Features

• Hemt Low noise figure NFmin. = 0.35dB (Typ.) @ f=2.4GHz NFmin. = 0.35dB (Typ.) @ f=4GHz High associated gain Gs = 18.0dB (Typ.) @ f=2.4GHz Gs = 13.0dB (Typ.) @ f=4GHz Fig.1 APPLICATION L t

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MGF4921AM

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Mitsubishi Electric Semiconductor

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📄 Datasheet

Description:

Super low noise ingaas hemt. The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers. The 4pin

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MGF4921AM

Mitsubishi Electric Semiconductor

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