MGF4921AM - SUPER LOW NOISE InGaAs HEMT

Mitsubishi Electric Semiconductor

Datasheet Details

Part number	MGF4921AM
Manufacturer	Mitsubishi Electric Semiconductor
File Size	294.75 KB
Description	SUPER LOW NOISE InGaAs HEMT
Datasheet	MGF4921AM_MitsubishiElectricSemiconductor.pdf

The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers.

Low noise figure NFmin. = 0.35dB (Typ. ) @ f=2.4GHz NFmin. = 0.35dB (Typ. ) @ f=4GHz High associated gain Gs = 18.0dB (Typ. ) @ f=2.4GHz Gs = 13.0dB (Typ. ) @ f=4GHz Fig.1.

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Published: Nov 1, 2012 |