MGF4935AM - SUPER LOW NOISE InGaAs HEMT

Mitsubishi Electric Semiconductor

Datasheet Details

Part number	MGF4935AM
Manufacturer	Mitsubishi Electric Semiconductor
File Size	217.33 KB
Description	SUPER LOW NOISE InGaAs HEMT
Datasheet	MGF4935AM_MitsubishiElectricSemiconductor.pdf

The MGF4935AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.

Low noise figure @ f=12GHz NFmin. = 0.45dB (Typ. ) High associated gain @ f=12GHz Gs = 12.0dB (Typ. ) Fig.1.

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Published: Nov 1, 2012 |