MGF4935AM

SUPER LOW NOISE InGaAs HEMT

Mitsubishi Electric Semiconductor

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MGF4935AM

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Mitsubishi Electric Semiconductor

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Super low noise ingaas hemt.
May/2008 MITSUBISHI SEMICONDUTOR MGF4935AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead.
The MGF4935AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to K.

✔ MGF4935AM Features

Low noise figure @ f=12GHz NFmin. = 0.45dB (Typ.) High associated gain @ f=12GHz Gs = 12.0dB (Typ.) Fig.1 MITSUBISHI Proprietary APPLICATION S to Ku band low noise ampl

✔ MGF4935AM Application

Please be aware, however, that the technical information contained in these materials does not comprise con

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MGF4935AM SUPER LOW NOISE InGaAs HEMT Mitsubishi Electric Semiconductor

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✔ MGF4935AM Features

✔ MGF4935AM Application

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