Datasheet Details
Part number:
MGF4916G
Manufacturer:
Mitsubishi
File Size:
19.34 KB
Description:
SUPER LOW NOISE InGaAs HEMT
Features
* Low noise figure @f=12GHz MGF4916G:NFmin.=0.80dB(MAX.) MGF4919G:NFmin.=0.50dB(MAX.)
* High associated gain Gs=12.0dB(MIN.) @f=12GHz 2 2 0.5±0.15 3 APPLICATION L to Ku band low noise amplifiers. ø1.8±0.2 QUALITY GRADE
* GG 1 GATE 2 SOURCE RECOMMENDED BIAS CONDITIONS
MGF4916G_MitsubishiElectricSemiconductor.pdf
MGF4916G, SUPER LOW NOISE InGaAs HEMT
The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers.
The hermetically sealed metal-ceramic package assures OUTLINE DRAWING 4.0±0.2 1.85±0.2 1 Unit:millimeters minimumu parasitic losses, and has a configuration suitable for mic
MGF4916G Distributor
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