MGF4316G - Super Low Noise InGaAs HEMT

Mitsubishi

Datasheet Details

Part number	MGF4316G
Manufacturer	Mitsubishi
File Size	33.67 KB
Description	Super Low Noise InGaAs HEMT
Datasheet	MGF4316G_MitsubishiElectricSemiconductor.pdf

The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers.

Low noise figure @ f=12GHz MGF4316G : NF min. =0.80dB (MAX. ) MGF4319G : NF min. =0.50dB (MAX. ) High associated gain Gs=12.0 dB (MIN. ) @ f=12GHz.

📁 MGF4316G Similar Datasheet

MGF4910D - (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT (Mitsubishi Electric)
MGF4910E - (MGF4910E Series) Super Low Noise InGaAs HEMT (Mitsubishi Electric)
MGF4914D - (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT (Mitsubishi Electric)
MGF4914E - (MGF4910E Series) Super Low Noise InGaAs HEMT (Mitsubishi Electric)
MGF4916D - (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT (Mitsubishi Electric)
MGF4917D - (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT (Mitsubishi Electric)
MGF4918E - (MGF4910E Series) Super Low Noise InGaAs HEMT (Mitsubishi Electric)
MGF4919E - (MGF4910E Series) Super Low Noise InGaAs HEMT (Mitsubishi Electric)

Other Datasheets by Mitsubishi

Published: Apr 29, 2005 |