MGF4919G

SUPER LOW NOISE InGaAs HEMT

Mitsubishi

MGF4919G Features

* Low noise figure @f=12GHz MGF4916G:NFmin.=0.80dB(MAX.) MGF4919G:NFmin.=0.50dB(MAX.)

* High associated gain Gs=12.0dB(MIN.) @f=12GHz 2 2 0.5±0.15 3 APPLICATION L to Ku band low noise amplifiers. ø1.8±0.2 QUALITY GRADE

* GG 1 GATE 2 SOURCE RECOMMENDED BIAS CONDITIONS

MGF4919G General Description

The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures OUTLINE DRAWING 4.0±0.2 1.85±0.2 1 Unit:millimeters minimumu parasitic losses, and has a configuration suitable for mic.

MGF4919G Datasheet (19.34 KB)

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MGF4919G

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Mitsubishi

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19.34 KB

Description:

Super low noise ingaas hemt.

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MGF4919G SUPER LOW NOISE InGaAs HEMT Mitsubishi

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MGF4919G Features

MGF4919G General Description

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