MGF4951A - SUPER LOW NOISE InGaAs HEMT

Mitsubishi

Datasheet Details

Part number	MGF4951A
Manufacturer	Mitsubishi
File Size	180.67 KB
Description	SUPER LOW NOISE InGaAs HEMT
Datasheet	MGF4951A_MitsubishiElectricSemiconductor.pdf

The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.

Low noise figure @ f=12GHz MGF4951A : NFmin. = 0.40dB (Typ. ) MGF4952A : NFmin. = 0.60dB (Typ. ) Fig.1 High associated gain @ f=12GHz Gs = 12.0dB (Typ. ).

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Published: Apr 29, 2005 |