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MGF4953B SUPER LOW NOISE InGaAs

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Description

www.DataSheet4U.com Nov./2006 MITSUBISHI SEMICONDUTOR MGF4953B SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) .
The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.

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Datasheet Specifications

Part number
MGF4953B
Manufacturer
Mitsubishi Electric
File Size
145.16 KB
Datasheet
MGF4953B_MitsubishiElectric.pdf
Description
SUPER LOW NOISE InGaAs

Applications

* Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages result

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