MGF4953B Datasheet, Ingaas, Mitsubishi Electric

MGF4953B Features

• Ingaas Low noise figure @ f=20GHz NFmin. = 0.55dB (Typ.) High associated gain @ f=20GHz Gs = 10.5dB (Typ.) Fig.1 MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by

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MGF4953B

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Mitsubishi Electric

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📄 Datasheet

Description:

Super low noise ingaas. The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic

MGF4953B Application

• Applications Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or u

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MGF4953B

Mitsubishi Electric

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