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MGF4953B - SUPER LOW NOISE InGaAs

Mitsubishi Electric

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Datasheet Details

Part number	MGF4953B
Manufacturer	Mitsubishi Electric
File Size	145.16 KB
Description	SUPER LOW NOISE InGaAs
Datasheet	MGF4953B_MitsubishiElectric.pdf

MGF4953B Product details

Description

The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.

Features

Low noise figure @ f=20GHz NFmin. = 0.55dB (Typ. ) High associated gain @ f=20GHz Gs = 10.5dB (Typ. ) Fig.1.

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Published: Dec 15, 2006 |