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MGF4931AM SUPER LOW NOISE InGaAs HEMT

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Description

June/2004 MITSUBISHI SEMICONDUCTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) .
The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.

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* Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages result

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