MGF4931AM

SUPER LOW NOISE InGaAs HEMT

Mitsubishi Electric Semiconductor

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MGF4931AM

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Mitsubishi Electric Semiconductor

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Super low noise ingaas hemt.
June/2004 MITSUBISHI SEMICONDUCTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lea.
The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to K.

✔ MGF4931AM Features

Low noise figure @ f=12GHz NFmin. = 0.6dB (Typ.) High associated gain @ f=12GHz Gs = 11.5dB (Typ.) Fig.1 MITSUBISHI Proprietary APPLICATION S to Ku band low noise ampli

✔ MGF4931AM Application

Please be aware, however, that the technical information contained in these materials does not comprise con

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MGF4931AM SUPER LOW NOISE InGaAs HEMT Mitsubishi Electric Semiconductor

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✔ MGF4931AM Features

✔ MGF4931AM Application

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