MGF4936AM - SUPER LOW NOISE InGaAs HEMT

Mitsubishi Electric Semiconductor

Datasheet Details

Part number	MGF4936AM
Manufacturer	Mitsubishi Electric Semiconductor
File Size	247.43 KB
Description	SUPER LOW NOISE InGaAs HEMT
Datasheet	MGF4936AM_MitsubishiElectricSemiconductor.pdf

The MGF4936AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.

Low noise figure @ f=12GHz NFmin. = 0.50dB (Typ. ) High associated gain @ f=12GHz Gs = 12.0dB (Typ. ) Fig.1.

📁 MGF4936AM Similar Datasheet

MGF4910D - (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT (Mitsubishi Electric)
MGF4910E - (MGF4910E Series) Super Low Noise InGaAs HEMT (Mitsubishi Electric)
MGF4914D - (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT (Mitsubishi Electric)
MGF4914E - (MGF4910E Series) Super Low Noise InGaAs HEMT (Mitsubishi Electric)
MGF4916D - (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT (Mitsubishi Electric)
MGF4916G - SUPER LOW NOISE InGaAs HEMT (Mitsubishi)
MGF4917D - (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT (Mitsubishi Electric)
MGF4918E - (MGF4910E Series) Super Low Noise InGaAs HEMT (Mitsubishi Electric)

Other Datasheets by Mitsubishi Electric Semiconductor

Published: Nov 1, 2012 |