MGF4714CP Datasheet (Mitsubishi) - PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT

MGF4714CP, PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT

The MGF4714CP low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers.

The plastic mold package offer high cost performance, and has a configuration suitable for microstrip circuits.

The MGF4714CP is mounted in Super 12 tape.

OUTLINE DRAWING (0.6) 1 Unit:mi

MGF4714CP Features

* Low noise figure NFmin.=1.00dB(MAX.)

* High associated gain Gs=11.0dB(MIN.) @f=12GHz @f=12GHz 2 (ø1.2) 3 0.5±0.1 APPLICATION L to Ku band low noise amplifiers. 2.2±0.2 (8˚) (R0.1) (R0.1) QUALITY GRADE

* GG 4.0±0.3 RECOMMENDED BIAS CONDITIONS

* VDS=2V,ID=10mA