| Part number | MGF4841CL |
|---|---|
| Datasheet | MGF4841CL-Mitsubishi.pdf |
| File Size | 351.48 KB |
| Manufacturer | Mitsubishi Electric |
| Description | Power GaAs HEMT |
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The MGF4841CL power InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The MGF4841CL is designed for automotive application and AEC-Q101 qualified.
See all Mitsubishi Electric datasheets
| Part Number | Description |
|---|---|
| MGF4316G | Super Low Noise InGaAs HEMT |
| MGF4319G | Super Low Noise InGaAs HEMT |
| MGF4714CP | PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT |
| MGF4916G | SUPER LOW NOISE InGaAs HEMT |
| MGF4919G | SUPER LOW NOISE InGaAs HEMT |
| MGF4951A | SUPER LOW NOISE InGaAs HEMT |
| MGF4952A | SUPER LOW NOISE InGaAs HEMT |
| MGF0904A | High-power GaAs FET |
| MGF0905A | High-power GaAs FET |
| MGF0906B | High-power GaAs FET |
