MGF4714CP Description
The MGF4714CP low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The plastic mold package offer high cost performance, and has a configuration suitable for microstrip circuits. The MGF4714CP is mounted in Super 12 tape.
MGF4714CP Key Features
- Low noise figure NFmin.=1.00dB(MAX.)
- High associated gain Gs=11.0dB(MIN.) @f=12GHz @f=12GHz
- VDS=2V,ID=10mA
- Refer to Bias Procedure