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MGF4714CP - PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT

General Description

The MGF4714CP low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers.

The plastic mold package offer high cost performance, and has a configuration suitable for microstrip circuits.

The MGF4714CP is mounted in Super 12 tape.

Key Features

  • Low noise figure NFmin. =1.00dB(MAX. ).
  • High associated gain Gs=11.0dB(MIN. ) @f=12GHz @f=12GHz 2 (ø1.2) 3 0.5±0.1.

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MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714CP low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The plastic mold package offer high cost performance, and has a configuration suitable for microstrip circuits. The MGF4714CP is mounted in Super 12 tape. OUTLINE DRAWING (0.6) 1 Unit:millimeters 2 FEATURES • Low noise figure NFmin.=1.00dB(MAX.) • High associated gain Gs=11.0dB(MIN.) @f=12GHz @f=12GHz 2 (ø1.2) 3 0.5±0.1 APPLICATION L to Ku band low noise amplifiers. 2.2±0.2 (8˚) (R0.1) (R0.1) QUALITY GRADE • GG 4.0±0.