MGF4714CP Datasheet | Mitsubishi Electric

DESCRIPTION The MGF4714CP low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The plastic mold package offer high cost performance, and has a configuration suitable for microstrip circuits. The MGF4714CP is mounted in Super 12 tape. OUTLINE DRAWING (0.6) Unit:millimeters FEATURES - Low noise figure NFmin.=1.00d B(MAX.) - High associated gain Gs=11.0d B(MIN.) @f=12GHz @f=12GHz (ø1.2) 0.5±0.1 APPLICATION L to Ku band low noise amplifiers. 2.2±0.2 (8˚) (R0.1) (R0.1) QUALITY GRADE - GG 4.0±0.3 REMENDED BIAS CONDITIONS - VDS=2V,ID=10m A - Refer to Bias Procedure 1 Gate 2 Source 3 Drain GD-22 ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature Ratings -4 -4 60 50 125 -65 to +125 Unit V V m A m W ˚C ˚C ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol V(BR)GDO IGSS IDSS VGS(off) gm GS NFmin. Parameter Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Transconductance Associated gain Minimum noise figure IG=-10µA VGS=-2V,VDS=0V VGS=0V,VDS=2V VDS=2V,ID=500µA VDS=2V,ID=10m A VDS=2V,ID=10m A f=12GHz Test conditions Min -3 - 15 -0.1 - 11.0 - Limits Typ - - - - 55 - - Max - 50 60 -1.5 - - 1.00 Unit V µA m A V m S d B d B Nov. ´97 MITSUBISHI SEMICONDUCTOR Ga As FET PLASTIC MOLD PACKAGED LOW NOISE In Ga As...