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MGF4714CP

Manufacturer: Mitsubishi Electric

MGF4714CP datasheet by Mitsubishi Electric.

MGF4714CP datasheet preview

MGF4714CP Datasheet Details

Part number MGF4714CP
Datasheet MGF4714CP_MitsubishiElectricSemiconductor.pdf
File Size 17.76 KB
Manufacturer Mitsubishi Electric
Description PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT
MGF4714CP page 2 MGF4714CP page 3

MGF4714CP Overview

The MGF4714CP low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The plastic mold package offer high cost performance, and has a configuration suitable for microstrip circuits. The MGF4714CP is mounted in Super 12 tape.

MGF4714CP Key Features

  • Low noise figure NFmin.=1.00dB(MAX.)
  • High associated gain Gs=11.0dB(MIN.) @f=12GHz @f=12GHz
  • VDS=2V,ID=10mA
  • Refer to Bias Procedure
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