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MGF4316G Datasheet Super Low Noise InGaAs HEMT

Manufacturer: Mitsubishi Electric

Overview: MITSUBISHI SEMICONDUCTOR MGF431xG Super Low Noise InGaAs.

General Description

The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers.

The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.

OUTLINE DRAWING

Key Features

  • Low noise figure @ f=12GHz MGF4316G : NF min. =0.80dB (MAX. ) MGF4319G : NF min. =0.50dB (MAX. ) High associated gain Gs=12.0 dB (MIN. ) @ f=12GHz.