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MGF4316G - Super Low Noise InGaAs HEMT

Description

The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers.

The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.

Features

  • Low noise figure @ f=12GHz MGF4316G : NF min. =0.80dB (MAX. ) MGF4319G : NF min. =0.50dB (MAX. ) High associated gain Gs=12.0 dB (MIN. ) @ f=12GHz.

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Datasheet Details

Part number MGF4316G
Manufacturer Mitsubishi Electric
File Size 33.67 KB
Description Super Low Noise InGaAs HEMT
Datasheet download datasheet MGF4316G Datasheet
Additional preview pages of the MGF4316G datasheet.

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Full PDF Text Transcription

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MITSUBISHI SEMICONDUCTOR MGF431xG Super Low Noise InGaAs HEMT DESCRIPTION The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. OUTLINE DRAWING FEATURES Low noise figure @ f=12GHz MGF4316G : NF min.=0.80dB (MAX.) MGF4319G : NF min.=0.50dB (MAX.) High associated gain Gs=12.0 dB (MIN.) @ f=12GHz APPLICATION L to K band low noise amplifiers.
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