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MGF4319G - Super Low Noise InGaAs HEMT

General Description

The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers.

The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.

Key Features

  • Low noise figure @ f=12GHz MGF4316G : NF min. =0.80dB (MAX. ) MGF4319G : NF min. =0.50dB (MAX. ) High associated gain Gs=12.0 dB (MIN. ) @ f=12GHz.

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Other Datasheets by Mitsubishi Electric

Part Number Description
MGF4316G Super Low Noise InGaAs HEMT
MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT
MGF4841CL Power GaAs HEMT
MGF4916G SUPER LOW NOISE InGaAs HEMT
MGF4919G SUPER LOW NOISE InGaAs HEMT

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI SEMICONDUCTOR MGF431xG Super Low Noise InGaAs HEMT DESCRIPTION The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. OUTLINE DRAWING FEATURES Low noise figure @ f=12GHz MGF4316G : NF min.=0.80dB (MAX.) MGF4319G : NF min.=0.50dB (MAX.) High associated gain Gs=12.0 dB (MIN.) @ f=12GHz APPLICATION L to K band low noise amplifiers.