MGF4319G Datasheet | Mitsubishi Electric

DESCRIPTION The MGF431x G series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. OUTLINE DRAWING FEATURES Low noise figure @ f=12GHz MGF4316G : NF min.=0.80d B (MAX.) MGF4319G : NF min.=0.50d B (MAX.) High associated gain Gs=12.0 d B (MIN.) @ f=12GHz APPLICATION L to K band low noise amplifiers. QUALITY GRADE REMENDED BIAS CONDITIONS VDS=2V , ID=10m A Refer to Bias Procedure GD-4 ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature ( Ta=25°C ) Ratings -4 -4 60 50 125 -65 ~ +125 Unit < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into V V m A m W °C °C making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. ELECTRICAL CHARACTERISTICS Symbol V(BR)GDO IGSS IDSS VGS (off) gm Gs NFmin Rth (ch-a) Parameter Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to Source cut-off voltage Transconductance Associated gain Minimum noise figure Thermal resistance - 1 ( Ta=25°C ) Test conditions IG= -10µA VGS= -2V, VDS=0V VGS=0V, VDS=2V VDS=2V, ID=500µA VDS=2V, ID=10m A VDS=2V, ID=10m A, f=12GHz VDS=2V, ID=10m A, f=12GHz MGF4316G MGF4319G ∆Vf method Limits Min. -3 - 15 -0.1 - 12 - - - Typ. - - - - 75 13.5 - - 625 Max - 50 60 -1.5 - - 0.8 0.5 - Unit V µA m A V m S d B...