MGF4841CL Description
The MGF4841CL power InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The MGF4841CL is designed for automotive application and AEC-Q101 qualified.
| Part number | MGF4841CL |
|---|---|
| Download | MGF4841CL Datasheet (PDF) |
| File Size | 351.48 KB |
| Manufacturer | Mitsubishi Electric |
| Description | Power GaAs HEMT |
|
|
|
| Part Number | Description |
|---|---|
| MGF4316G | Super Low Noise InGaAs HEMT |
| MGF4319G | Super Low Noise InGaAs HEMT |
| MGF4714CP | PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT |
| MGF4916G | SUPER LOW NOISE InGaAs HEMT |
| MGF4919G | SUPER LOW NOISE InGaAs HEMT |
The MGF4841CL power InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The MGF4841CL is designed for automotive application and AEC-Q101 qualified.