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MGF4841CL - Power GaAs HEMT

General Description

The MGF4841CL power InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.

The MGF4841CL is designed for automotive application and AEC-Q101 qualified.

Key Features

  • High gain and High Pout,sat Glp=8.5dB, Pout,sat=11.5dBm (Typ. ) @ f=24.3GHz.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< Power GaAs HEMT > MGF4841CL Micro-X type plastic package DESCRIPTION The MGF4841CL power InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The MGF4841CL is designed for automotive application and AEC-Q101 qualified. Outline Drawing FEATURES High gain and High Pout,sat Glp=8.5dB, Pout,sat=11.5dBm (Typ.) @ f=24.3GHz APPLICATION K band low noise amplifiers Fig.1 Fig.1 QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=1.5V , VGS=0V MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric ORDERING INFORMATION Tape & reel 4,000pcs/reel RoHS COMPLIANT MGF4841CL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.