MGF4941AL

The MGF4941AL is SUPER LOW NOISE InGaAs HEMT designed by Mitsubishi Electric Semiconductor.

Product Overview

Mitsubishi Electric Semiconductor

Part number	MGF4941AL
Manufacturer	Mitsubishi Electric Semiconductor
File Size	149.68 KB
Description	SUPER LOW NOISE InGaAs HEMT
Datasheet	MGF4941AL_MitsubishiElectricSemiconductor.pdf
Additional preview pages of the MGF4941AL datasheet.

The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers.

Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ. ) High associated gain @ f=12GHz Gs = 13.5dB (Typ. ) Fig.1.

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Published: Mar 6, 2011 |