MGF4941AL

SUPER LOW NOISE InGaAs HEMT

Mitsubishi Electric Semiconductor

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	Mitsubishi Electric	MGF4941AL	MGF4941AL	SUPER LOW NOISE InGaAs HEMT	Win Source Electronics	50808	900 units	$0.5	🛒 Buy Now

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Part number:

MGF4941AL

Manufacturer:

Mitsubishi Electric Semiconductor

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149.68 KB

Description:

Super low noise ingaas hemt.
18/May/2007 MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION .
The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is designed for use in Ku ban.

✔ MGF4941AL Features

Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.) Fig.1 APPLICATION L to K band low noise amplifiers QUALITY GRADE GG

✔ MGF4941AL Application

Please be aware, however, that the technical information contained in these materials does not comprise con

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MGF4941AL SUPER LOW NOISE InGaAs HEMT Mitsubishi Electric Semiconductor

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✔ MGF4941AL Features

✔ MGF4941AL Application

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