MGF4963BL

The MGF4963BL is Low Noise GaAs HEMT designed by Mitsubishi Electric Semiconductor.

Product Overview

Mitsubishi Electric Semiconductor

Part number	MGF4963BL
Manufacturer	Mitsubishi Electric Semiconductor
File Size	291.44 KB
Description	Low Noise GaAs HEMT
Datasheet	MGF4963BL_MitsubishiElectricSemiconductor.pdf
Additional preview pages of the MGF4963BL datasheet.

The MGF4963BL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.

Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ. ) High associated gain @ f=20GHz Gs = 13.5dB (Typ. ) Fig.1.

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Other Datasheets by Mitsubishi Electric Semiconductor

Published: Nov 1, 2012 |