MGF4963BL Low Noise GaAs HEMT

Mitsubishi Electric Semiconductor

Description

< Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package .
The MGF4963BL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.

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Datasheet Specifications

Part number: MGF4963BL
Manufacturer: Mitsubishi Electric Semiconductor
File Size: 291.44 KB
Datasheet: MGF4963BL_MitsubishiElectricSemiconductor.pdf
Description: Low Noise GaAs HEMT

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MGF4963BL Low Noise GaAs HEMT Mitsubishi Electric Semiconductor

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