MGF4961B

SUPER LOW NOISE InGaAs HEMT

Mitsubishi Electric

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Part number:

MGF4961B

Manufacturer:

Mitsubishi Electric

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137.32 KB

Description:

Super low noise ingaas hemt.
MITSUBISHI SEMICONDUTOR Feb./2007 MGF4961B SUPER LOW NOISE InGaAs HEMT DESCRIPTION The.
The MGF4961B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band .

✔ MGF4961B Features

Low noise figure @ f=20GHz NFmin. = 0.7dB (Typ.) High associated gain @ f=20GHz Gs = 13.5dB (Typ.) (1.05) ① C to K band low noise amplifiers 0.5±0.1 ③ 1.19±0.2 0.125

✔ MGF4961B Application

Please be aware, however, that the technical information contained in these materials does not comprise con

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MGF4961B SUPER LOW NOISE InGaAs HEMT Mitsubishi Electric

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✔ MGF4961B Features

✔ MGF4961B Application

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