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MGF4961B

The MGF4961B is SUPER LOW NOISE InGaAs HEMT designed by Mitsubishi Electric.

Product Overview

Mitsubishi Electric

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MGF4961B SUPER LOW NOISE InGaAs HEMT by Mitsubishi Electric - Datasheet Preview — Datasheet preview – MGF4961B

Datasheet Details

Part number	MGF4961B
Manufacturer	Mitsubishi Electric
File Size	137.32 KB
Description	SUPER LOW NOISE InGaAs HEMT
Datasheet	MGF4961B_MitsubishiElectric.pdf
Additional preview pages of the MGF4961B datasheet.

Product details

Description

The MGF4961B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.

Features

Low noise figure @ f=20GHz NFmin. = 0.7dB (Typ. ) High associated gain @ f=20GHz Gs = 13.5dB (Typ. ) (1.05) ① C to K band low noise amplifiers 0.5±0.1 ③ 1.19±0.2 0.125 ±0.05.

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Published: Jul 4, 2007 |