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MGF4961B SUPER LOW NOISE InGaAs HEMT

MGF4961B Description

MITSUBISHI SEMICONDUTOR Feb./2007 MGF4961B SUPER LOW NOISE InGaAs HEMT .
The MGF4961B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.

MGF4961B Applications

* Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages result

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Datasheet Details

Part number
MGF4961B
Manufacturer
Mitsubishi Electric
File Size
137.32 KB
Datasheet
MGF4961B_MitsubishiElectric.pdf
Description
SUPER LOW NOISE InGaAs HEMT

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SUPER LOW NOISE InGaAs HEMT Mitsubishi Electric
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