RA35H1516M-E01 Datasheet, Radio, Mitsubishi Electric Semiconductor

RA35H1516M-E01 Features

• Radio
• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>40W, ηT>50% @ VDD=12.5V, VGG=5V, Pin=50mW
• Low-Power Control Current IGG=1mA (typ) at V

PDF File Details

Part number:

RA35H1516M-E01

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

75.86kb

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📄 Datasheet

Description:

154-162mhz 40w 12.5v mobile radio. The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The bat

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RA35H1516M-E01

Mitsubishi Electric Semiconductor

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