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RA35H1516M-E01 Datasheet - Mitsubishi Electric Semiconductor

154-162MHz 40W 12.5V MOBILE RADIO

RA35H1516M-E01 Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)

* Pout>40W, ηT>50% @ VDD=12.5V, VGG=5V, Pin=50mW

* Low-Power Control Current IGG=1mA (typ) at VGG=5V

* Module Size: 66 x 21 x 9.88 mm

* Linear operation is possible by setting the quiescent drai

RA35H1516M-E01 General Description

The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the .

RA35H1516M-E01 Datasheet (75.86 KB)

Preview of RA35H1516M-E01 PDF

Datasheet Details

Part number:

RA35H1516M-E01

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

75.86 KB

Description:

154-162mhz 40w 12.5v mobile radio.
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M 154-162MHz 40W 12.5V MOBILE RADIO BLOCK DIAGRAM 2 .

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RA35H1516M-E01 154-162MHz 40W 12.5V MOBILE RADIO Mitsubishi Electric Semiconductor

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