* High breakdown v oltage （BVCEO≧ 40V） High-current driv ing （I O(max)＝－500mA ） With output clamping diodes Driv ing av ailable with TTL output or C-MOS IC output Wide operating temperature range (Ta= -40～+85℃) Output current-sourcing ty pe IN5 → 5 IN6 → 6 IN7 → 7 IN8 → 8 Vs 9 OUTPUT 14 →O5 13 →O6 1
M63840KP
Mitsubishi Electric
1.31 MB
(m63840xp) 8-unit 500ma source type darlington transistor-array.
www.DataSheet4U.com
MITSUBISHI SEMICONDUCTOR 【TRANSISTOR ARRAY】
PRELIMINARY
M63840P/FP/KP
＊Notice: This is not a f inal specif ication. Some parame.
📁 Related Datasheet
M63840FP (M63840xP) 8-Unit 500mA Source Type Darlington Transistor-Array (Mitsubishi Electric)
M63840P (M63840xP) 8-Unit 500mA Source Type Darlington Transistor-Array (Mitsubishi Electric)
M63800FP 7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE (Mitsubishi)
M63802FP (M63802xx) 7-UNIT 300mA TRANSISTOR ARRAY (Mitsubishi Electric)
M63802GP (M63802xx) 7-UNIT 300mA TRANSISTOR ARRAY (Mitsubishi Electric)
M63802KP (M63802xx) 7-UNIT 300mA TRANSISTOR ARRAY (Mitsubishi Electric)
M63802P (M63802xx) 7-UNIT 300mA TRANSISTOR ARRAY (Mitsubishi Electric)
M63803FP (M63803xx) 7-UNIT 300mA TRANSISTOR ARRAY (Mitsubishi Electric)
M63803GP (M63803xx) 7-UNIT 300mA TRANSISTOR ARRAY (Mitsubishi Electric)
M63803KP (M63803xx) 7-UNIT 300mA TRANSISTOR ARRAY (Mitsubishi Electric)
TAGS
Image Gallery
