M63840P Datasheet - Mitsubishi Electric

M63840P (M63840xP) 8-Unit 500mA Source Type Darlington Transistor-Array

www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR 【TRANSISTOR ARRAY】 PRELIMINARY M63840P/FP/KP ＊Notice: This is not a f inal specif ication. Some parametric limits are subject to change. 8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode DESCRIPT ION M63840P/FP/KP are eight-circuit output-sourcing Darlington transistor array .The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perf orm high-current driv ing with extremely low input-curre.

M63840P Features

* High breakdown v oltage （BVCEO≧ 40V） High-current driv ing （I O(max)＝－500mA ） With output clamping diodes Driv ing av ailable with TTL output or C-MOS IC output Wide operating temperature range (Ta= -40～+85℃) Output current-sourcing ty pe IN5 → 5 IN6 → 6 IN7 → 7 IN8 → 8 Vs 9 OUTPUT 14 →O5 13 →O6 1

M63840P_MitsubishiElectric.pdf