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RA07M3843M

RoHS Compliance

RA07M3843M Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V)

* Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW

* ηT>40% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=50mW

* Broadband Frequency Range: 378-430MHz

* Low-Power Control Current IGG=1mA (typ) at VGG=3.5V

RA07M3843M General Description

The RA07M3843M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 378- to 430-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the .

RA07M3843M Datasheet (156.03 KB)

Preview of RA07M3843M PDF

Datasheet Details

Part number:

RA07M3843M

Manufacturer:

Mitsubishi Electric

File Size:

156.03 KB

Description:

Rohs compliance.
www.DataSheet4U.com MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3843M BLOCK DIAGRAM 2 3 RoHS Compl.

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RA07M3843M RoHS Compliance Mitsubishi Electric

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