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CM1800HCB-34N High Voltage Insulated Gate Bipolar Transistor

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Description

CM1800HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage In.

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Datasheet Specifications

Part number
CM1800HCB-34N
Manufacturer
Mitsubishi
File Size
273.11 KB
Datasheet
CM1800HCB-34N-Mitsubishi.pdf
Description
High Voltage Insulated Gate Bipolar Transistor

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