Datasheet4U.com

MGFK48G3745 - Ku band internally matched power GaN HEMT

Mitsubishi

📥 Download Datasheet

MGFK48G3745 Datasheet Preview — Preview of MGFK48G3745 PDF

datasheet Preview Page 2

Datasheet Details

Part number	MGFK48G3745
Manufacturer	Mitsubishi
File Size	229.26 KB
Description	Ku band internally matched power GaN HEMT
Datasheet	MGFK48G3745-Mitsubishi.pdf

MGFK48G3745 Product details

Description

The MGFK48G3745, GaN HEMT with an N-channel schottky gate, is designed for Ku-band applications.

Features

High voltage operation VDS=24V.
High output power Po=48.3dBm (TYP. ) @Pin=42dBm.
High efficiency PAE=33% (TYP. ) @Pin=42dBm.
Designed for use in Class AB linear amplifiers.

📁 MGFK48G3745 Similar Datasheet

MGFK44A4045 - power GaAs FET (Mitsubishi Electric)
MGFK38A3745 - power GaAs FET (Mitsubishi Electric Semiconductor)
MGF0912A - L & S BAND GaAs FET (Mitsubishi Electric)
MGF0913A - L & S BAND GaAs FET (Mitsubishi Electric)
MGF0915A - L & S BAND GaAs FET (Mitsubishi Electric)
MGF0916A - L & S BAND GaAs FET (Mitsubishi Electric)
MGF0917A - L & S BAND GaAs FET (Mitsubishi Electric)
MGF0951P - L & S BAND GaAs FET (Mitsubishi Electric)

Other Datasheets by Mitsubishi

MGFK25V4045 - power GaAs FET
MGFK30V4045 - power GaAs FET
MGFK33V4045 - power GaAs FET
MGFK35V2228 - 12.2-12.8GHz BAND 3W INTERNALLY MATCHED GaAs FET
MGFK35V2732 - 12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET
MGFK35V4045 - power GaAs FET

Published: Apr 16, 2019 |