V58C265164S - 64 Mbit DDR SDRAM 2.5 VOLT 4M X 16
The V58C265164S is a four bank DDR DRAM organized as 4 banks x 1Mbit x 16.
The V58C265164S achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock All of the control, address, circuits are synchron
V58C265164S Features
* I 4 banks x 1Mbit x 16 organization I High speed data transfer rates with system frequency up to 250 MHz I Data Mask for Write Control (DM) I Four Banks controlled by BA0 & BA1 I Programmable CAS Latency: 2, 2.5, 3 I Programmable Wrap Sequence: Sequential or Interleave I Programmable Burst Length:
