V58C265804S - HIGH PERFORMANCE 2.5 VOLT 8M X 8 DDR SDRAM 4 BANKS X 2Mbit X 8
The V58C265804S is a four bank DDR DRAM organized as 4 banks x 2Mbit x 8.
The V58C265804S achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock All of the control, address, circuits are synchroni
V58C265804S Features
* s 4 banks x 2Mbit x 8 organization s High speed data transfer rates with system frequency up to 166 MHz s Data Mask for Write Control (DM) s Four Banks controlled by BA0 & BA1 s Programmable CAS Latency: 2, 2.5, 3 s Programmable Wrap Sequence: Sequential or Interleave s Programmable Burst Length: 2,
