2N7002LT1 Datasheet - Motorola Inc

2N7002LT1 TMOS FET Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7002LT1/D TMOS FET Transistor N Channel Enhancement 3 DRAIN 1 GATE 2N7002LT1 Motorola Preferred Device 3 2 SOURCE MAXIMUM RATINGS Rating Drain Source Voltage Drain Gate Voltage (RGS = 1.0 MΩ) Drain Current Continuous TC = 25°C(1) Drain Current Continuous TC = 100°C(1) Drain Current Pulsed(2) Gate Source Voltage Continuous Non repetitive (.

2N7002LT1 Features

* under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of

2N7002LT1_MotorolaInc.pdf