BCW69LT1 Datasheet - Motorola Inc

BCW69LT1 - General Purpose Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW69LT1/D General Purpose Transistors PNP Silicon COLLECTOR 3 1 BASE BCW69LT1 BCW70LT1 3 1 2 EMITTER 2 MAXIMUM RATINGS Rating Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VEBO IC Value 45 5.0 100 Unit Vdc Vdc mAdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) DEVICE MARKING BCW69LT1 = H1; BCW70LT1 = H2 THERMA.

BCW69LT1 Features

* ng method, the difference shall be a maximum of 10°C.

* The soldering temperature and time shall not exceed 260°C for more than 10 seconds.

* When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less.

* After soldering has been complete

BCW69LT1_MotorolaInc.pdf