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2N3924 - NPN silicon annular RF power transistors

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Part number 2N3924
Manufacturer Motorola
File Size 344.79 KB
Description NPN silicon annular RF power transistors
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Full PDF Text Transcription

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2N3924 (SILICON) thru 2N3927 NPN silicon annular RF power transistors, optimized for large-signal power-amplifier and driver applications to 300 MHz. CASE 24 2N3925 (TO· 102) Collector electrically connected to case; stud electrically isolated from case CASE 36 2N3926 2N3927 (TO·60) Stud and case electrically connected to emitter CASE 79 2N3924 (TQ.39) Collector connected to case MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol 2N3924 2N392S 2N3926 2N3927 Unit Collector-Emitter Voltage VCEO 18 Collector-Base Voltage VCB 36 Emitter-Base Voltage VEB 4.0 Collector Current IC fr.5 Power DisSipation @' TC = 25° C PD 7.0 Derate above 25° C 40 Operating and Storage Junction TJ , Tstg Temperature Range 18 18 36 36 4.0 4.0 1.0 1.5 10 11.6 57.1 66.
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