* r Dissipation (See Note 2) Temperature Under Bias Storage Temperature Symbol VDD Vin, Vout Iout PD Tbias Tstg Value
* 0.5 to + 4.6
* 0.5 to 6.0 ± 20 1.6
* 10 to 85
* 55 to 125 Unit V V mA W °C °C This device contains circuitry to protect the inputs against damage due
MCM69P536C Datasheet (210.72 KB)
MCM69P536C
Motorola
210.72 KB
32k x 36 bit pipelined burstram synchronous fast static ram.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MCM69P536C/D
32K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
The MCM69P536.
📁 Related Datasheet
MCM69P618C 64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM (Motorola)
MCM69P735 128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM (Motorola)
MCM69P736 128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM (Motorola)
MCM69P737 128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM (Motorola)
MCM69P817 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM (Motorola)
MCM69P818 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM (Motorola)
MCM69P819 Pipelined BurstRAM Synchronous Fast Static RAM (Motorola)
MCM6926A 128K x 9 Bit Fast Static Random Access Memory (Motorola)
MCM6929A 256K x 4 Bit Fast Static Random Access Memory (Motorola)
MCM6946 512K x 9 Bit Fast Static Random Access Memory (Motorola)
