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MGP7N60E Insulated Gate Bipolar Transistor

MGP7N60E Description

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP7N60E/D Insulated Gate Bipolar Transistor N *Channel Enhancement<.

MGP7N60E Features

* ey fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc.

MGP7N60E Applications

* requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E
* series introduces an energy efficient, ESD protected, and short circuit rugged device.

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Datasheet Details

Part number
MGP7N60E
Manufacturer
Motorola
File Size
122.09 KB
Datasheet
MGP7N60E_MotorolaInc.pdf
Description
Insulated Gate Bipolar Transistor

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Insulated Gate Bipolar Transistor Motorola
Motorola MGP7N60E-like datasheet