MJE18002
Motorola
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Power transistor.
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MJE18002 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot vari.
MJE18002 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE18002
..
DESCRIPTION ·With TO-220 package ·High vo.
MJE18002D2 - POWER TRANSISTORS
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE18002D2/D
MJE18002D2
Advance Information
High Speed, High Gain Bipolar NPN Power T.
MJE18004 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot vari.
MJE18004 - POWER TRANSISTOR
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE18004/D
™ Data Sheet SWITCHMODE™
Designer's
NPN Bipolar Power Transistor For Switc.
MJE18004 - Switch-mode NPN Bipolar Power Transistor
(ON)
MJE18004, MJF18004
Switch-mode NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF18004 have an applications specific s.
MJE18004 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220 package .. ·High voltage ,high .
MJE18004D2 - POWER TRANSISTORS
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE18004D2/D
MJE18004D2
Designer's
™ Data Sheet
High Speed, High Gain Bipolar NPN Po.
MJE18004G - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
MJE18004G
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min) ·High Switching Speed ·G:Pb-Free Pa.
MJE18006 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot vari.