MJE18002 Datasheet (Motorola)

MJE18002, POWER TRANSISTOR

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18002/D ™ Data Sheet SWITCHMODE™ Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18002 have an applications specific state of the art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts.

These high voltage/high speed transistors offer the following: Improved Efficiency Due to Low Base Drive Requirements: <

MJE18002 Features

* MPS) DC (MJE18002) 1.00 DC (MJF18002) 1 ms 2.5 50 µs 10 µs 1 µs I C, COLLECTOR CURRENT (AMPS) 2.0 TC ≤ 125°C IC/IB ≥ 4 LC = 500 µH 1.5 1.0 0.10 0.5 0V 0 0 VBE(off) = 0.5 V

* 1.5 V 600 800 1000 200 400 800 VCE, COLLECTOR

* EMITTER VOLTAGE (VOLTS) 1200 0.01 10 10 100 100 VCE, COLLE