MJE8503 Datasheet, Transistors, Motorola

PDF File Details

Part number:

MJE8503

Manufacturer:

Motorola

File Size:

89.90kb

Download:

📄 Datasheet

Description:

Power transistors.

MJE8503 Application

• Applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Def

TAGS

MJE8503

Motorola

📁 Related Datasheet

MJE8500 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor MJE8500 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) ·High Switching Speed ·Minimum L.

MJE8501 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor MJE8501 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed ·Minimum L.

MJE8502 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) ·High Switching Speed ·Minimum Lot-to-Lot .

MJE8503 - Silicon NPN Power Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Sp.

MJE8503 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot .

MJE8503A - POWER TRANSISTORS (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE8503A/D Advance Information MJE8503A* *Motorola Preferred Device SWITCHMODE™ Seri.

MJE800 - NPN Transistor (Fairchild)
MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 .

MJE800 - 4.0 AMPERE DARLINGTON POWER TRANSISTORS (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE700/D PNP Plastic Darlington Complementary Silicon Power Transistors . . . designe.

MJE800 - DARLINGTON POWER TRANSISTORS (ON)
.. MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devi.

MJE800 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60 V ·DC Current Gain— : hFE = 750(Min) @ .