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MRF20060 RF Power Bipolar Transistors

MRF20060 Description

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20060/D The RF Sub *Micron Bipolar Line RF Power Bipol.

MRF20060 Features

* br>
* j5
* j3
* j0.5
* j2 m et4U. co
* j1 ee DataSh DataSheet4U. com VCC = 26 V, ICQ = 200 mA, Pout = 60 W (PEP) f MHz 1800 1850 1900 1950 2000 Zin(1) Ω 1.0 + j4.8 1.5 + j4.8 2.0 + j4.7 2.5 + j4.7 3.5 + j4.7 ZOL
* Ω 1.7 + j3.3 2.2 + j2.7 2.4 + j3.0 2.3 + j3.2

MRF20060 Applications

* at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for large
* signal, common emitter class A and class AB amplifier applications. These devices are suitable for frequency modulated, amplitude modulated and multi

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Datasheet Details

Part number
MRF20060
Manufacturer
Motorola
File Size
278.63 KB
Datasheet
MRF20060_Motorola.pdf
Description
RF Power Bipolar Transistors

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Power Bipolar Transistors Motorola
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