MRF5015 N-CHANNEL BROADBAND RF POWER FET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N *Channel Enhan.

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Datasheet Specifications

Part number: MRF5015
Manufacturer: Motorola
File Size: 154.23 KB
Datasheet: MRF5015_Motorola.pdf
Description: N-CHANNEL BROADBAND RF POWER FET

Features

* of 109 Ω, resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate
* to
* source threshold voltage, V GS(th). Gate Voltage Rating
* Never exceed the gate voltage rating. Exceeding the rated V GS

Applications

* at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large
* signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment.
* Guaranteed Performance at 512 MHz, 12.5 Volts Output Power
* 15 Watts

MRF5015 Distributors

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MRF5015 N-CHANNEL BROADBAND POWER FET Motorola

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