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MRF5015 - N-CHANNEL BROADBAND RF POWER FET

MRF5015 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N *Channel Enhan.

MRF5015 Features

* of 109 Ω, resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate
* to
* source threshold voltage, V GS(th). Gate Voltage Rating
* Never exceed the gate voltage rating. Exceeding the rated V GS

MRF5015 Applications

* at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large
* signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment.
* Guaranteed Performance at 512 MHz, 12.5 Volts Output Power
* 15 Watts

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Datasheet Details

Part number
MRF5015
Manufacturer
Motorola
File Size
154.23 KB
Datasheet
MRF5015_Motorola.pdf
Description
N-CHANNEL BROADBAND RF POWER FET

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