MRF5015 - N-CHANNEL BROADBAND RF POWER FET
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz.
The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment.
Guaranteed Performance at 512 MHz, 12.5 Volts
MRF5015 Features
* of 109 Ω, resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate
* to
* source threshold voltage, V GS(th). Gate Voltage Rating
* Never exceed the gate voltage rating. Exceeding the rated V GS
