Datasheet Specifications
- Part number
- MTD5N25E
- Manufacturer
- Motorola
- File Size
- 193.22 KB
- Datasheet
- MTD5N25E_Motorola.pdf
- Description
- TMOS POWER FET
Description
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD5N25E/D Designer's TMOS E-FET .™ Power Field Effect Transisto.
Features
* bed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 1000 800 C, CAPACITANCE (pF) Ciss VDS = 0 V VGS = 0 V TJ = 25°C 600 Ciss 400 Crss 200 0 Crss 10 5 VGS 0 VDS 5 10 15 Coss 20 25 GATEApplications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.MTD5N25E Distributors
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