Datasheet Specifications
- Part number
- MTD5P06E
- Manufacturer
- Motorola
- File Size
- 167.07 KB
- Datasheet
- MTD5P06E_Motorola.pdf
- Description
- TMOS POWER FET
Description
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD5P06E/D Designer's TMOS E-FET .™ Power Field Effect Transisto.
Features
* h a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 1000 800 C, CAPACITANCE (pF) VDS = 0 V Ciss VGS = 0 V TJ = 25°C 600 Ciss Crss Coss 200 Crss 0 10 5 VGS 0 VDS 5 10Applications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.MTD5P06E Distributors
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