* h a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 1000 800 C, CAPACITANCE (pF) VDS = 0 V Ciss VGS = 0 V TJ = 25°C 600 Ciss Crss Coss 200 Crss 0 10 5 VGS 0 VDS 5 10
MTD5P06E Datasheet (167.07 KB)
MTD5P06E
Motorola
167.07 KB
Tmos power fet.
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD5P06E/D Designer's TMOS E-FET .™ Power Field Effect Transisto.
📁 Related Datasheet
MTD5P06V TMOS POWER FET (Motorola)
MTD5P06V Power MOSFET (ON Semiconductor)
MTD5010M Ultra High Speed Photo Diode (Marktech Corporate)
MTD502E 2 Port 10M/100M Switch (Myson)
MTD505 5 Port 10M/100M Ethernet Switch (Myson)
MTD508 8-port Switch (Myson Technology)
MTD516 16 Port 10M/100M Ethernet Switch (Myson)
MTD55N10J3 N-Channel Logic Level Enhancement Mode Power MOSFET (CYStech)
MTD55N10Q8 N-Channel Logic Level Enhancement Mode Power MOSFET (CYStech)
MTD5D0C03J4 N- & P-Channel Logic Level Enhancement Mode Power MOSFET (CYStech)
