MTD5P06E Datasheet (Motorola)

MTD5P06E, TMOS POWER FET

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD5P06E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount P Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.

The new energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for low voltage, high speed switching a

MTD5P06E Features

* h a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 1000 800 C, CAPACITANCE (pF) VDS = 0 V Ciss VGS = 0 V TJ = 25°C 600 Ciss Crss Coss 200 Crss 0 10 5 VGS 0 VDS 5 10