MTD5P06V Datasheet (Motorola)

MTD5P06V, TMOS POWER FET

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD5P06V/D Designer's TMOS V ™ .™ Data Sheet MTD5P06V Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount P Channel Enhancement Mode Silicon Gate TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs.

This new technology more than doubles the present cell density of our 50 and 60 volt T

MTD5P06V Features

* of TMOS V

* On

* resistance Area Product about One

* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

* Faster Switching than E

* FET Predecessors TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM TM D G S CASE 369A

* 13, Sty